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MMDF2N02E
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
25
?
?
?
?
?
?
?
?
1.0
10
100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 2.2 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
1.0
2.0
0.083
0.110
2.6
3.0
0.100
0.200
?
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
380
532
pF
Output Capacitance
Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
235
55
329
110
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
7.0
21
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 4.5 Vdc, R G = 9.1 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
17
27
18
10
35
19
25
30
48
30
30
70
38
50
Gate Charge
(V DS = 16 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
10.6
1.3
2.9
2.7
30
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 2)
Reverse Recovery Time
See Figure 11
Reverse Recovery Storage Charge
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
1.0
34
17
17
0.03
1.4
66
?
?
?
Vdc
ns
m C
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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